general features v ds = 20v,i d =11a r ds(on) < 7m ? @ v gs =2.5v r ds(on) < 9m ? @ v gs =4.5v esd rating: 2000v hbm high power and current handing capability lead free product is acquired surface mount package application pwm application load switch schematic diagram marking and pin assignment tssop-8 top view package marking and ordering information device marking device device package reel size tape width quantity MSC0211GE tssop-8 ?330mm 12mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v drain current-continuous i d 11 a drain current-pulsed (note 1) i dm 44 a maximum power dissipation p d 1.6 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 78 /w MSC0211GE 20v(d-s) dual n-channel enhancement mode power mos fet esd protected MSC0211GE lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
parameter symbol condition min typ max unit gate-body leakage current i gss v gs =10v,v ds =0v - - 10 a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.6 0.8 1.2 v v gs =4.5v, i d =10a - 5.5 7 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =5.5a - 7 9 m ? forward transconductance g fs v ds =5v,i d =11a 25 - - s dynamic characteristics (note4) input capacitance c lss - 1710 - pf output capacitance c oss - 232 - pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz - 200 - pf switching characteristics (note 4) turn-on delay time t d(on) - 2.5 ns turn-on rise time t r - 7.2 ns turn-off delay time t d(off) - 49 ns turn-off fall time t f v dd =10v,r l =1 ? v gs =10v,r gen =3 ? - 10.8 ns total gate charge q g - 17.5 nc gate-source charge q gs - 1.5 - nc gate-drain charge q gd v ds =10v,i d =10a, v gs =4.5v - 4.5 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a - - 1.2 v diode forward current (note 2) i s - - 11 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 - v zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a more semiconductor company limited http://www.moresemi.com 2/6 MSC0211GE
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSC0211GE
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) normalized on-resistance i d - drain current (a) figure 8 drain-source on-resistance rdson on-resistance(m ) c capacitance (pf) vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) i s - reverse drain current (a) vgs gate-source voltage (v) figure 12 source- drain diode forward more semiconductor company limited http://www.moresemi.com 4/6 MSC0211GE
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSC0211GE
tssop-8 package information dimensions in millimeters symbol min max d 2.900 3.100 e 4.300 4.500 b 0.190 0.300 c 0.090 0.200 e1 6.250 6.550 a 1.100 a2 0.800 1.000 a1 0.020 0.150 e 0.65(bsc) l 0.500 0.700 h 0.25(typ) 1 7 more semiconductor company limited http://www.moresemi.com 6/6 MSC0211GE
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